VDF small single crystal furnace / directional solidification furnace product description :
It for silicon carbide single crystal ingot production, Diameter of single crystal is 2 inches and 3 inches, the furnace for 2 inches ingot named THG2, for 3 inches ingot named THG3.
Vacuum chamber, vacuum system, depressurization system, seed bar move system, crucible move system, heating system, gas path system, cooling system, alarming system, crucible device, control system.
Made by 1Cr18Ni9Ti, water cooling, vertical type, flanges on its top.
4.Seed bar move system
The seed bar can move to top and bottom and rotation, platform driven by server motor, move speed controlled by slow-fast gear. Rotation speed is continuous adjustable.
5.Crucible move system
The crucible can move to top and bottom and rotation, platform driven by server motor, move speed controlled by slow-fast gear. Rotation speed is continuous adjustable.
6.Vacuum acquisition system
Take turbo molecular pump system, ultimate vacuum degree(cold condition) ≤3 X10-5Pa
7.One set of depressurization system, controlled by computer system.
Using in heating graphite crucible, max temp 2500C
9.Gas pipe system
Quality flow gauges matched
Protect the equipment safety and normal use, for over temp, thermocouple break, water pressure, gas pressure alarming and protection.
Touch screen with PLD control system, it has control and protection, process parameter setting and record function. Furnace controlled by PLC, the system can follow program process to doing job, protect and alarming. Under abnormal situation, it can diagnose fault automatically, and take accordance action. The system can record process parameter and copy, search, the OP system is Windows.
nach EN 12412: Uf -Wert = bis 0,63 W/(m²K)
nach EN 12207: Klasse 4
nach EN 12208: Klasse E 1050
Füllungsstärken von 32 bis 70 mm
Rahmen 90 mm, Flügel 100 mm, Sprosse 90 mm